Effect of uniaxial strain on characteristic frequency of scaled SiGe HBT with embedded stress raiser

In order to further improve the high-frequency characteristics of highly scaled SiGe HBT and consider compatibility with mature CMOS technology, a new structure is proposed by introducing an embedded Si1−yGey stress raiser produce additional uniaxial in bulk collector region. The energy-band configuration multi-layered emitter has been investigated estimation strain effect, then influence on electrical properties frequency response studied employing SILVACO TCAD tools. results show that device performance enhanced different degrees altering Ge fraction (y) raiser. At y = 0.3, current gain increased approximately 6% compared case without region (y 0). For uniform Si0.75Ge0.25 base, cut-off (fT) maximum oscillating (fmax) are, respectively, peaked at 507.7 GHz 730.7 GHz. Approximately 29.1% improvement fT 71.5% fmax have achieved for comparison equivalent traditional HBT. 0.1, characteristic considered best due × product.